global GaN power device was valued at $16 million in 2015 and is projected to reach $273 million by 2022, growing at a CAGR of 49.8% from 2016 to 2022. Gallium nitride (GaN) transistors have evolved as an enhanced performance substitute of silicon-based transistors, owing to their ability of fabricating more compact devices for a given resistance value and breakdown voltage as compared to silicon devices.
GaN power devices can attain extremely low resistance and high-frequency switching. These properties are exploited in high-efficiency power supplies, electric vehicle (EV), hybrid electric vehicle (HEV), photovoltaic inverters, and RF switching. These devices are applicable in power supplies for server, IT equipment, high-efficiency & stable power supplies, and EV & HEV devices.
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Major companies profiled in the report include Efficient Power Conversion Corporation (EPC), GaN Systems, On Semiconductors, Panasonic Corporation, VisIC, Texas Instruments Inc., Toshiba Corporation, Fujitsu Limited, Infineon Technologies AG, and Taiwan Semiconductor Manufacturing Company.
The growth of the GaN power device market is driven by increase in demand for GaN in radio frequency equipment; rise in adoption in the telecommunication industry; and surge in demand for AC fast charger, LiDAR, and wireless power. Moreover, these devices are more advantageous as compared to silicon devices, thus fueling the growth of the market. However, preference of silicon carbide (SiC) in high-voltage semiconductor applications restraint the market growth. Requirement of GaN power devices in electric and hybrid vehicle provides new opportunities for the players operating in the market.
The global GaN power devices market is segmented based on device, industry vertical, and geography. On the basis of device, it is categorized into GaN power discrete devices, GaN power ICs, and GaN power modules. By industry vertical, it is classified into consumer electronics, IT & telecommunication, automotive, aerospace & defense, and others. Geographically, it is analyzed across North America (U.S., Mexico, and Canada), Europe (UK, Germany, France, and rest of Europe), Asia-Pacific (China, Japan, Taiwan, South Korea, and rest of Asia-Pacific), and LAMEA (Latin America, Middle East, and Africa).
The study provides an in-depth analysis of the global GaN power devices market to elucidate the prominent investment pockets.
Current trends and future estimations are outlined to determine the overall market scenario.
The report provides information regarding key drivers, restraints, and opportunities with a detailed impact analysis.
Geographically, the market is analyzed based on four regions, namely, North America, Europe, Asia-Pacific, and LAMEA.
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GaN Power Discrete Devices
GaN Power ICs
GaN Power Modules
BY INDUSTRY VERTICAL
IT & Telecommunication
Aerospace & Defense
Table of Contents
CHAPTER 1 INTRODUCTION
CHAPTER 2 EXECUTIVE SUMMARY
CHAPTER 3 MARKET OVERVIEW
CHAPTER 4 GLOBAL GAN POWER DEVICES MARKET, BY DEVICE
CHAPTER 5 GLOBAL GAN POWER DEVICES MARKET, BY INDUSTRY VERTICAL
CHAPTER 6 GLOBAL GAN POWER DEVICES MARKET, BY GEOGRAPHY
CHAPTER 7 RELATED INDUSTRY INSIGHTS
CHAPTER 8 COMPANY PROFILES
Name: Sameer Joshi
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